个人简介

蔡雪芬，博士，助理教授/特聘副研究员。2021年于中国工程物理研究院北京计算科学研究中心获得博士学位，师从国际著名半导体物理学家魏苏淮教授。2021-2023年在中国科学院半导体研究所超晶格国家重点实验室李树深院士的团队进行博士后研究，2024年1月入职深圳大学物理系。研究方向为半导体物理机制研究，通过采用基于密度泛函理论的第一性原理计算方法，探究氧化镓（Ga₂O₃）、碳化硅（SiC）、氮化镓（GaN）等半导体的晶相、电学、光学以及缺陷/掺杂等物理特性，解决半导体研究中存在的基础物理问题，为集成电路中半导体器件的设计与应用提供理论基础和新思路。目前，以第一作者及通讯作者身份在国际知名学术期刊上发表SCI论文10余篇。研究成果多次获得国内外知名研究小组正面引用报导，并担任Scripta Materialia、Journal of Applied Physics等多个期刊审稿人。2022年获得国家自然科学青年基金项目资助。

欢迎对凝聚态物理、第一性原理、计算物理等研究感兴趣的博士后、研究生以及优秀本科生加入。

论文信息

[1] X. Cai, J.-W. Luo, S.-S. Li, S.-H. Wei, H.-X. Deng, Overcoming the doping limit in semiconductors via illumination, Phys. Rev. B, 106, 214102 (2022).

[2] X. Cai, F. P. Sabino, A. Janotti, S.-H. Wei, Approach to achieving a p-type transparent conducting oxide: Doping of bismuth-alloyed Ga₂O₃ with a strongly correlated band edge state, Phys. Rev. B, 103, 115205 (2021).

[3] X. Cai, H.-X. Deng, S.-H. Wei, Carrier-stabilized hexagonal Ge, Phys. Rev. B, 103, 245202 (2021).

[4] X. Cai, S.-H. Wei, P. Deák, C. Franchini, S.-S. Li, H.-X. Deng, Band-gap trend of corundum oxides α-M₂O₃ (M = Co, Rh, Ir): An ab initio study, Phys. Rev. B, 108, 075137 (2023).

[5] X. Cai, J. Yang, P. Zhang, S.-H. Wei, Origin of Deep Be Acceptor Levels in Nitride Semiconductors: The Roles of Chemical and Strain Effects, Phys. Rev. Appl., 11, 034019 (2019).

[6] X. Cai, Y. Yang, H.-X. Deng, S.-H. Wei, Origin of hydrogen passivation in 4H-SiC, Phys. Rev. Mater., 5, 064604 (2021).

[7] X. Cai, S.-H. Wei, Perspective on the band structure engineering and doping control of transparent conducting materials, Appl. Phys. Lett., 119, 070502 (2021). (Featured in AIP Scilight)

[8] X. Cai, S.-H. Wei, Perspective on defect control in semiconductors for photovoltaics, J. Appl. Phys., 134, 220901 (2023). (Editor’s Pick)

[9] H. Yu, X. Cai*, Y, Yang, Z.-H. Wang, S.-H. Wei, Band gap anomaly in cuprous halides. Comput. Mater. Sci. 203, 111157 (2022).

[10] Z.-Y. Liu, C.-X. Zhang, R. Cao, X. Cai*, HX Deng, Fundamental identification of defect-related electron trap in Hf_1-xZr_xO₂ alloy gate dielectric on silicon: oxygen vacancy versus hydrogen interstitial, Phys. Status Solidi - Rapid Res. Lett. 2200316, (2022).

[11] C. Zhang, X. Cai, C.-X. Zhang, S.-H. Wei, H.-X. Deng, Antiferromagnetism driven charge density wave in infinite-layer nickelates, Phys. Rev. B, 109, 045114 (2024).

[12] Y. Song, G. Zhang, X. Cai et al., General Model for Defect Dynamics in Ionizing-Irradiated SiO2-Si Structures, Small 18, 2107516 (2022).

[13] W. Li, X. Cai et al., In₂Se₃, In₂Te₃, and In₂(Se,Te)₃ alloys as photovoltaic materials, J. Phys. Chem. Lett. 13, 12026 (2022).

[14] C. He, X. Cai et al., Self-catalyzed sensitization of CuO nanowires via a solvent-free click reaction, Langmuir 36(48): 14539 (2020).

[15] Y. Song, H. Zhou, X. Cai et al., Defect dynamic model of the synergistic effect in neutron-and γ-ray-irradiated silicon NPN transistors, ACS Appl. Mater. Interfaces 12(26): 29993 (2020).