个人信息
Publication ListsYear 2022[1] Zhuang Ma, Pu Huang*, Jin Li, Peng Zhang, Jiaxin Zheng, Wen Xiong, Fei Wang, Xiuwen Zhang, “Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers”, npj Comput. Mater. 8(1), 1-11 (2022)[2] B. Liu, J. Li, G. Wang, F. Ye, H. Yan, M. Zhang, S.-C. Dong, L. Lu, P. Huang*, T. He*, P. Xu, H.-S. Kwok, G. Li*, “Lattice strain modulation toward efficient blue perovskite light-emitting diodes”, Science Advances, 8(38): eabq0138 (2022).[3] Pu Huang, Zhuang Ma, Gui Wang, Wen Xiong, Peng Zhang, Yiling Sun, Zhengfang Qian, Xiuwen Zhang*, “Origin of the enhanced edge optical transition in transition metal dichalcogenide flakes”, J. Mater. Chem. C 10(13), 5303-5310 (2022) Year 2021[1] X. Rong, X. Chen, W. Chen, Yiguo Xu*, Pu Huang* and Xiuwen Zhang*, “Electrical Switch of Poisson’s Ratio in IV-VI Monolayers via Pseudophase Transitions”, J. Phys. Chem. Lett. 12, 3217-3223 (2021) [2] Qiaojun Peng#, Dongyan Li#, Pu Huang#, Yangyang Ren, Zexin Li, Lejing Pi, Ping Chen, Menghao Wu, Xiuwen Zhang, Xing Zhou*, Tianyou Zhai*, “Room-Temperature Ferroelectricity in 2D Metal-Tellurium-Oxyhalide Cd7Te7Cl8O17 via Selenium-Induced Selective-Bonding Growth”, ACS Nano 15, 16525-16532 (2021) [3] Pu Huang#, Xinbo Chen#, Peng Zhang#, Hongyi Sun, Shaogang Xu, Wen Xiong, Rui Wang*, Han Zhang*, Qihang Liu*, Xiuwen Zhang*, “Crystalline chirality and interlocked double hourglass Weyl fermion in polyhedra-intercalated transition metal dichalcogenides”, NPG Asia Mater. 13, 1-9 (2021) [4] Le-Le Gong, Wen Xiong*, Yi-Qun Xie, Jie Hu, Pu Huang, Fei Wang, “The large photoresponse and high polarization sensitivity of Te-based optoelectronic devices with the adsorbed hydroxide ions”, Appl. Phys. Lett. 118, 221109 (2021) [5] Fei Wang, Zhuang Ma, Yuting Wei, Pu Huang, Xiuwen Zhang, “Switchable electric polarization of phosphorene in mixed dimensional van der Waals heterostructure”, Appl. Surf. Sci. 563, 150276 (2021). Year 2020[1] Y. Zhang#, P. Huang#, J. Guo#, R. Shi, W. Huang, Z. Shi, L. Wu, F. Zhang, L. Gao, C. Li, X. Zhang*, J. Xu* and H. Zhang*, “Graphdiyne-Based Flexible Photodetectors with High Responsivity and Detectivity”, Adv. Mater. 32, 2001082 (2020). [2] Zhaowei Shu, Qiaojun Peng, Pu Huang#, Zhi Xu, Abdulsalam Aji Suleiman, Xiuwen Zhang, Xuedong Bai, Xing Zhou*, Tianyou Zhai*, “Growth of Ultrathin Ternary Teallite (PbSnS2) Flakes for Highly Anisotropic Optoelectronics”, Matter 2, 977-987 (2020).[3] J. Hu, W. Xiong*, P. Huang*, Y. Wang, C. Cai and J. Wang, “First-principles study on strain-modulated negative differential resistance effect of in-plane device based on heterostructure tellurene”, Appl. Surf. Sci. 528, 146957 (2020).[4] P. Huang, P. Zhang, S. Xu, H. Wang, X. Zhang*, and H. Zhang*, “Recent Advances in Two-Dimensional Ferromagnetism: Materials Synthesis, Physical Properties and Device Applications”, Nanoscale, 12, 2309-2327 (2020). [5] P. Huang#, Z. Xia#, X. Gao, J. M. Rondinelli, X. Zhang*, H. Zhang, K. R. Poeppelmeier* and A. Zunger*, “Ferri-chiral Compounds with Potentially Switchable Dresselhaus Spin Splitting”, Phys. Rev. B 102, 235127 (2020).[6] X. Chen, W. Chen, S. Yu, S. Xu, X. Rong, P. Huang*, X. Zhang*, and S.-H. Wei*, “Designing Dirac Semimetals with a Honeycomb Na3Bi-lattice via Isovalent Cation Substitution”, J. Mater. Chem. C, 8, 1257-1264 (2020).[7] Abdulsalam Aji Suleiman, Pu Huang#, Bao Jin, Jizhou Jiang, Xiuwen Zhang, Xing Zhou*, Tianyou Zhai*, “Space-confined Growth of 2D InI Showing High Sensitivity in Photodetection”, Adv. Electron. Mater., 6, 2000284 (2020).[8] Jing-Yu Mao, Zhi Zheng, Zi-Yu Xiong, Pu Huang, Guang-Long Ding, Ruopeng Wang, Zhan-Peng Wang, Jia-Qin Yang, Ye Zhou, Tianyou Zhai*, Su-Ting Han*, “Lead-free Monocrystalline Perovskite Resistive Switching Device for Temporal Information Processing”, Nano Energy, 71, 104616 (2020). Year 2019[1] W. Han#, P. Huang#, L. Li, F. Wang, P. Luo, K. Liu, X. Zhou, H. Li, X. Zhang, Y. Cui, and T. Zhai. “Two-dimensional Inorganic Molecular Crystals”, Nature Commun. 10, 1-10 (2019). [2] J. Duan#, P. Huang#, K. Liu, B. Jin, A. A. Suleiman, X. Zhang, X. Zhou, and T. Zhai, “Growth of Highly Anisotropic 2D Ternary CaTe2O5 Flakes on Molten Glass”, Adv. Funct. Mater., 29, 1903216 (2019). [10] Y. Zhang, F. Zhang, L. Wu, Y. Zhang, W. Huang, Y. Tang, L. Hu, P. Huang*, X. Zhang*, H. Zhang*, “Van der Waals Integration of Bismuth Quantum Dots-decorated Tellurium Nanotubes (Te@Bi) Heterojunctions and Plasma-Enhanced Optoelectronic Applications”, Small, 15, 1903233 (2019). [3] W. Huang, Y. Zhang, Q. You, P. Huang*, Y. Wang, Z. N. Huang, Y. Ge, L. Wu, Z. Dong, X. Dai Y. Xiang, J. Li, X. Zhang*, and H. Zhang*. “Enhanced Photodetection Properties of Tellurium@Selenium Roll-to-Roll Nanotube Heterojunctions”, Small, 15, 1900902 (2019).[4] X. Chen, P. Huang, X. Zhu, S. Zhuang, H. Zhu, J. Fu, A. S. Nissimagoudar, W. Li, X. Zhang, L. Zhou, Y. Wang, Z. Lv, Y. Zhou, and S.-T. Han, “Keggin-Type Polyoxometalate Cluster As An Active Component For Redox-Based Nonvolatile Memory”, Nanoscale Horizons, 4, 697-704 (2019). [5] X. Chen, X. Zhu, S. R. Zhang, J. Pan, P. Huang, C. Zhang, G. Ding, Y. Zhou, K. Zhou, V. A. L. Roy, and S.-T. Han, “Controlled Nonvolatile Transition in Polyoxometalates-Graphene Oxide Hybrid Memristive Devices”, Adv. Mater. Technol., 4, 1800551 (2019). [6] X. Hu, P. Huang, K. Liu, B. Jin, X. Zhang, X. Zhang, X. Zhou, and T. Zhai, “Salt-Assisted Growth of Ultrathin GeSe Rectangular Flakes for Phototransistors with Ultrahigh Responsivity”, ACS Appl. Mater. & Inter., 11, 23353-23360 (2019). Year 2018[1] B. Jin#, P. Huang#, Q Zhang, X. Zhou, X. Zhang, L. Li, J. Su, H. Li, and T. Zhai, “Self-Limited Epitaxial Growth of Ultrathin Nonlayered CdS Flakes for High-Performance Photodetectors”, Adv. Funct. Mater. 28, 1800181 (2018). [2] X. Hu, P. Huang, B. Jin, X. Zhang, H. Li*, X. Zhou*, and T. Zhai*, “Halide-induced self-limited growth of ultrathin nonlayered Ge flakes for high-performance phototransistors”, J. Am. Chem. Soc. 140, 12909-12914 (2018). Years before 2017[1] Yangyang Wang#, Pu Huang#, Meng Ye, Ruge Quhe, Yuanyuan Pan, Han Zhang, Hongxia Zhong, Junjie Shi, and Jing Lu, “Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene”, Chem. Mater. 29, 2191-2201 (2017). [2] Pu Huang, Jun-jie Shi, Ping Wang, Min Zhang, Yi-min Ding, Meng Wu, Jing Lu and Xin-qiang Wang, “Origin of the Wide Band Gap from 0.6 to 2.3 eV in InN Photovoltaic Material: Quantum Confinement from Surface Nanostructure”, J. Mater. Chem. A 4, 17412-17418 (2016). [3] Pu Huang, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Xiong Cao, Meng Wu and Jing Lu, “Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure”, J. Phys. Chem. Lett. 7, 2888-2892 (2016). [4] Pu Huang, Hua Zong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Ying-ping He, Jing Lu and Xiao-dong Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect”, ACS Nano 9, 9276-9283 (2015).[5] Yi-min Ding, Jun-jie Shi, Congxin Xia, Min Zhang, Juan Du, Pu Huang, Meng Wu, Hui Wang, Yu-lang Cen and Shu-hang Pan, “Enhancement of Hole Mobility in InSe Monolayer via an InSe and Black Phosphorus Heterostructure”, Nanoscale 9, 14682- 14689 (2017). [6] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Xiong Cao and Meng Wu, “Modulation of Electronic and Optical Properties of ZnO by Inserting an Ultrathin ZnX(X = S, Se and Te) Layer to Form Short-Period (ZnO)5/(ZnX)1 Superlattice”, J. Alloy Compd. 711, 581-591 (2017).[7] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Meng Wu, Xiong Cao, Xin Rong, and Xinqiang Wang, “Improvement of p-Type Conductivity in Al-rich AlGaN Substituted by MgGa δ-Doping (AlN)m/(GaN)n (m≥n) Superlattice”, J. Alloy Compd. 686, 484-488 (2016). [8] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Xiong Cao, Meng Wu and Zhi-min Liao, “Breakthrough of the p-Type Doping Bottleneck in ZnO by Inserting an Ultrathin ZnX (X=S, Se and Te) Layer Doped with NX or AgZn”, J. Phys. D: Appl. Phys. 49, 095104 (2016). [9] Yi-min Ding, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Pu Huang, Meng Wu and Xiong Cao, Improvement of n-Type Conductivity in Hexagonal Boron Nitride Monolayers by Doping, Strain and Adsorption. RSC Adv. 6, 29190-29196 (2016). [10] Hong-xia Zhong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Pu Huang and Yi-min Ding, “Improving p-type Doping Efficiency in Al0.83Ga0.17N Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice with MgGa-ON δ-Codoping: Role of O-atom in GaN Monolayer”, AIP Adv. 5, 017114 (2015). [11] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Ying-ping He and Xiong Cao, “Reduction of the Mg Acceptor Activation Energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-Doping (AlN)5(GaN)1: the Strain Effect”, J. Phys. D: Appl. Phys. 48, 475104 (2015). [12] Yi-min Ding, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Pu Huang, Ying-ping He and Xiong Cao, “Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON and 3ON-VAl Surface Defects”, J. Phys. Chem. C. 119, 21688-21693 (2015). [13] Xiong Cao, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Pu Huang, Yi-min Ding and Meng Wu, “Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g‑C3N4, and g‑CN: Electric Field Effect”, J. Phys. Chem. C 120, 11299-11305 (2015). [14] Hong-xia Zhong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Pu Huang and Yi-min Ding, “Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect”, Sci. Rep. 4, 6710 (2014). [15] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Tong-jun Yu, Bo Shen, Jing Lu and Xihua Wang, “Enhancement of TE Polarized Light Extraction Efficiency in Nanoscale (AlN)m/(GaN)n(m>n) Superlattice Substitution for Al-Rich AlGaN Disorder Alloy: Ultra-thin GaN Layer Modulation”, New J. Phys. 16, 113065-113087 (2014). [16] Pu Huang, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Jing Lu and Xihua Wang, “Band Edge Modulation and Interband Optical Transition in AlN:MgAl-ON Nanotubes”, Mater. Res. Express 1, 025030 (2014).[17] Tie-Cheng Zhou, Jun-jie Shi, Min Zhang, Mao Yang, Hong-xia Zhong, Xin-he Jiang and Pu Huang, Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution. J. Phys. Chem. C 117, 16231-16237 (2013).
