个人简介

# 个人简介 #

李百奎，理学博士，半导体方向。

长聘副教授，特聘研究员。

*深圳市海外高层次人才*

*深圳大学优秀教师*

*深圳大学百篇优秀本科毕业论文指导教师*

于2004年在中国科技大学材料物理专业获得学士学位；

于2010年在 香港科技大学物理系获得博士学位；

其后在香港科技大学物理系和电子工程系从事博士后研究；

于2016年加入必赢76net线路。

主持国家自然科学基金面上项目、深圳市基础研究重点项目等多项科研项目。

在Nano Letters, IEEE Electron Device Letters, Applied Physics Letters等期刊

发表论文80余篇。申请美国发明专利5项，已授权1项。

&

# 研究方向 #

1，宽禁带半导体氮化镓GaN、氮化铝AlN、金刚石C等；功率电子器件，光电子器件， 半导体器件物理。

2，新型低维结构中的多体物理现象。

&

# 氮化镓GaN射频电子器件和功率电子器件二十年的发展，是目前5G网和快充充电走向普及的基础。

未来，随着氮化镓以及更宽禁带半导体氮化铝、金刚石等相关应用基础研究的深入，及更先进功率电子器件的研发，

将实现更高效率和更集约的电能转换系统，促进新一轮以提高能源利用效率为目标的电气革命。

&

# 招生及联系方式 #

欢迎对半导体物理/半导体器件物理，包括功率电子器件、光电子器件等感兴趣的博士后、研究生、以及优秀本科生加入。

E-mail：libk@szu.edu.cn

个人信息

近三年代表性文章:

##

# 氮化镓GaN#

1. Xi Tang, Ran Qiu, Yuhan Liu, Baikui Li*, “Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias”, Applied Physics Letters 117, 043501 (2020).

2. Baikui Li*, Hui Li, Jiannong Wang, and Xi Tang, “Asymmetric Bipolar Injection in a Schottky-Metal/p-GaN/AlGaN/GaN Device Under Forward Bias”, IEEE Electron Device Lett. 40, 1389 (2019).

3. Baikui Li, Xi Tang, Hui Li, H A Moghadam, Zhaofu Zhang, Jisheng Han, N-T Nguyen, Sima Dimitrijev, and Jiannong Wang, “Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs”, Applied Physics Express 12, 064001 (2019).

4, X. Tang, Baikui Li*, H. Moghadam, P. Tanner, J. Han and S. Dimitrijev, “Mechanism of threshold voltage shift in p-GaN gate AlGaN/GaN transistors”, IEEE Electron Device Lett. 39, 1145 (2018).

5, X. Tang, Baikui Li*, H. Moghadam, P. Tanner, J. Han and S. Dimitrijev, “Effect of hole-injection on leakage degradation in a p-GaN gate AlGaN/GaN power transistor”, IEEE Electron Device Lett. 39, 1203 (2018).

6, X. Tang, Baikui Li*, K. J. Chen and J. N. Wang, “Photocurrent of metal-AlGaN/GaN Schottky on-heterojunction diodes induced by GaN interband excitation”, Applied Physics Express 11, 054101 (2018).

7, X. Tang, Z. Zhang, J. Wei, Baikui Li*, J. N. Wang and K. J. Chen, “Photon emission and current-collapse suppression of AlGaN/GaN FET with photonic-ohmic drain at high temperatures”, Applied Physics Express 11, 054101 (2018).

##

# 氮化铝AlN #

1, Qin Zhou, Zhaofu Zhang, Hui Li, Sergii Golovynskyi, Xi Tang, Honglei Wu, Jiannong Wang, Baikui Li*, “Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center”, APL Materials 8, 081107 (2020).

2, Qin Zhou, Honglei Wu, Hui Li, Xi Tang, Zuoyan Qin, Dan Dong, Yan Lin, Ran Qiu, Ruisheng Zheng, Jiannnong Wang, and Baikui Li*, “Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport”, IEEE Journal of the Electron Device Society 7, 662 (2019).

##

# 低维体系多体激发态 #

1, Guanghui Cheng, Baikui Li*, Chunyu Zhao, Zijing Jin, K. M. Lau, Jiannong Wang*, “Ambipolar photocurrent doping and transport in monolayer WS2 by forming a graphene/WS2/quantum dots heterostructure”, IEEE Electron Device Lett. 42, 371 (2021).

2, I. Irfan, S. S. Golovynskyi, M. Bosi, L. Seravalli, O. Yeshchenko, Bin Xue, Dan Dong, Yan Lin, Ran Qiu, Baikui Li*, Junle Qu*, “Enhancement of Raman scattering and exciton/trion photoluminescence of monolayer and few layer MoS2 by Ag nanoprisms and nanoparticles: Shape and size effects”, The Journal of Physical Chemistry C 125, 4119 (2021).

3, S. Golovynskyi, I. Irfan, M. Bosi, L. Seravalli, O. I. Datsenkoc, I. Golovynskaa, Baikui Li*, Danying Lin*, Junle Qu, “Exciton and trion in few-layer MoS2: Thickness- and temperature-dependent photoluminescence”, Applied Surface Science 515, 146033 (2020).

4, Guanghui Cheng, Baikui Li*, Chunyu Zhao, Zijing Jin, Hui Li, Kei May Lau, and Jiannong Wang*, “Exciton aggregation induced photoluminescence enhancement of monolayer WS2”, Applied Physics Letters 114, 232101 (2019).

5, Yang Li, Nore Stolte, Baikui Li*, Hui Li, Guanghui Cheng, Ding Pan and Jiannong Wang*, “Interface charge-transfer induced intralayer excited-state biexcitons in graphene/WS2 van der Waals heterostructures”, Nanoscale 11, 13552 (2019).

6, G. Cheng, Baikui Li*, C. Zhao, X. Yan, H. Wang, K. Lau and J. N. Wang*, “Interfacially bound exciton state in a hybrid structure of monolayer WS2 and InGaN quantum dots”, Nano Letters 18, 5640 (2018).